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 ZXTN2020F 100V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m PD = 1.2W Complementary part number: ZXTP2029F typical VCE(sat) < 50mV @ 1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
* * * * Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage
Applications
* * * MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive
Ordering information
Device ZXTN2020FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000
Pinout - top view
Device marking
853
Issue 4 - January 2006
(c) Zetex Semiconductors plc 2006
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ZXTN2020F
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit 160 160 100 7 12 4 1 1.0 8 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W mW/oC W mW/oC W mW/oC
oC
Thermal resistance
Parameter Junction to ambient
(a)
Symbol RJA RJA RJA
Value 125 104 80
Unit
o o o
C/W C/W C/W
Junction to ambient (b) Junction to ambient (c)
NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs.
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ZXTN2020F
Characteristics
Issue 4 - January 2006
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ZXTN2020F
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEV V(BR)CEO V(BR)EBO ICEV ICBO IEBO HFE 100 100 35 Min. 160 160 100 7 Typ. 200 200 115 8 <1 <1 <1 220 200 60 13 Collector-emitter saturation voltage VCE(sat) 20 40 85 120 Base-emitter saturation voltage VBE(sat) 0.94 0.84 130 22 37 910
2%.
Max.
Unit V V V V
Conditions IC=100A IC =1A, -1V< VBE<+0.3V IC=10mA (a) IE=100A VCES=128V, VBE = -1V VCB=128V VEB=6V IC=10mA, VCE=2V(a) IC=1A, VCE=2V(a) IC=4A, VCE=2V(a) IC=10A, VCE=2V(a)
20 20 10
nA nA nA
300
30 50 105 150 1.05 0.94
mV mV mV mV V V MHz pF ns ns
IC=0.1A, IB=5mA(a) IC=1A, IB=100mA(a) IC=2A, IB=100mA(a) IC=4A, IB=400mA(a) IC=4A, IB=400mA(a) IC=4A, VCE=2V(a) Ic=100mA, VCE=10V, f=50MHz VCB=10V, f=1MHz VCC=10V, IC=1A, IB1=IB2=100mA
Base-emitter turn-on voltage VBE(on) Transition frequency Output capacitance Turn-on time Turn-off time fT Cobo t(on) t(off)
NOTES: (a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Issue 4 - January 2006
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ZXTN2020F
Typical characteristics
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ZXTN2020F
Packaging details - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 4 - January 2006
(c) Zetex Semiconductors plc 2006
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